Seminario: “Influence of disorder on domain wall dynamics in nanodevices with perpendicular magnetic anisotropy”, por el Dr. D. Ravelosona (Center for Nanoscience and Nanotechnology (C2N), Université Paris Sud & Spin-Ion Technologies, Orsay, France)

Marzo - 23. 2018  Sala de Seminarios, 12h

(resumen en inglés)

Materials with perpendicular magnetic anisotropy (PMA) are considered as the most promising candidates for the next generation of ultra-high density Magnetic Random Access Memory (MRAM) devices. One crucial issue for MRAM technologies is to better understand and minimize the role played by structural inhomogeneties that induce a distribution of magnetic properties and stochastic behaviour. In this talk, we will present our recent results of magnetic domain wall dynamics obtained in Ta-CoFeB-MgO nanodevices with perpendicular magnetic anisotropy (PMA) and discuss the critical problems to be addressed for its implementation into a memory device. By using He+ ion irradiation to softly engineer interface intermixing, we will show that domain wall (DW) dynamics can be strongly affected. Finally, we will focus on the influence of edge damages induced by the patterning process on DW dynamics.

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